英语翻译
Fig.7shows3DimagesandsurfaceroughnessoftheSiwaferbyAFMtocomparetheunimplantedwithimplantedsurface.RoughnessofSi-waferbeforeN+ionimplantationisabout6Åwhileitreducedtoabout3Åafterimplantation.Thelowestsurfaceroughnesswasobtainedonthesampleimplantedwith1×1017Ncm−2dose.ThisresultmeansthatthenitrogenionimplantationbyPSIIcausessurfacemorphologychangetogetherwithimprovementinmechanicalpropertiesoftrivalentchromiumsurface.
PSII:等离子体源离子注入