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Theseemissionsalsoseemthattheymaybeacombinationofoverlappingpeaks(fig.4(b),arrows).Asmallintensitychangeisnotedonheating(dottedline),implyingthattheemissionisslightlyaffectedbytemperature(fig.4(b)).Athighertemperatures(2932673K),theluminescentintensitydecreasesslightlywithoutasignificantwavelengthshift.Recently,itwasreportedthatamorphousSiOxnanowires,fabricatedbylaserablationofSi-SiO2-Fetarget,emitbluelightat420and470nm[9],whichcoincideswithourresult(fig.4(b)),the10nmdifference(4202430nm)probablybeingduetothepresenceofFe.Note,however,thatthesignalsmayalsoarisefromintrinsicSiO2defects,whicharestabilizedbyadjacentimpurities.Fig.3.Heatdissipatingalongaandcaxesduringnanowiregrowth(a),leavingidealthermaldiffusionspaceduringlargequantitiesofnanowiresgrowth(b).